igbt sp series s s s s ix pack 100a 1200v ix pack 100a 1200v ix pack 100a 1200v ix pack 100a 1200v PTMB100B12C PTMB100B12C PTMB100B12C PTMB100B12C circuit outline drawing maxmum ratings (tc=25 c) item symbol PTMB100B12C unit collector-emitter voltage v ces 1200 v gate - emitter voltage v ges +/ - 20 v dc i c 100 collector current 1 ms i cp 200 a collector power dissipation p c 500 w junction temperature range t j -40 to +150 c storage temperature range t stg -40 to +125 c isolation voltage terminal to base ac, 1 min.) v iso 2500 v module base to heatsink 2 mounting torque bus bar to main terminals f tor - n ? m electrical characteristics (tc=25 c) characteristic symbol test condition min. typ. max. unit collector-emitter cut-off current i ces v ce =1200v,v ge =0v - - 2.0 ma gate-emitter leakage current i ges v ge =+/- 20v,v ce =0v - - 1.0 a collector-emitter saturation voltage v ce(sat) i c =100a,v ge =15v - 1.9 2.4 v gate-emitter threshold voltage v ge(th) v ce =5v,i c =100ma 4.0 - 8.0 v input capacitance cies v ce =10v,v ge =0v,f=1mhz - 8300 - pf rise time t r - 0.25 0.45 turn-on time t on - 0.40 0.70 fall time t f - 0.25 0.35 switching time turn-off time t off v cc = 600v r l = 6 ohm r g = 10 ohm v ge = +/- 15v - 0.80 1.10 s free wheeling diodes ratings & characteristics (tc=25 c) item symbol rated value unit dc i f 100 forward current 1 ms i fm 200 a characteristic symbol test condition min. typ. max. unit peak forward voltage v f i f =100a,v ge =0v - 1.9 2.4 v reverse recovery time t rr i f =100a,v ge =-10v,di/dt=200a/ s - 0.2 0.3 s thermal characteristics characteristic symbol test condition min. typ. max. unit igbt - - 0.28 thermal impedance diode r th(j-c) junction to case - - 0.5 c/w dimension(mm) ? a pproximate weight : 330 g
PTMB100B12C 0246810 0 50 100 150 200 collector to emitter voltage v ce (v) collector current i c (a) fig.1- output characteristics (typical) t c =25 10v 9v 12v 15v v ge =20v 8v 7v 048121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.2- collector to emitter on voltage vs. gate to emitter voltage (typical) t c =25 100a i c =50a 200a 0 4 8 12 16 20 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.3- collector to emitter on voltage vs. gate to emitter voltage (typical) i c =50a 100a 200a t c =125 0 2 4 6 8 10 12 14 16 0 150 300 450 600 750 0 100 200 300 400 500 600 700 800 total gate charge qg (nc) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) fig.4- gate charge vs. collector to emitter voltage (typical) v ce =600v 400v 200v r l =6 t c =25 0.1 0.2 0.5 1 2 5 10 20 50 100 200 50 100 200 500 1000 2000 5000 10000 20000 50000 collector to emitter voltage v ce (v) capacitance c (pf) fig.5- capacitance vs. collector to emitter voltage (typical) cies coes cres v ge =0v f=1mh z t c =25 0 25 50 75 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 collector current i c (a) switching time t ( s) fig.6- collector current vs. switching time (typical) t off t f t r t on v cc =600v r g =10 v ge = 15v t c =25
PTMB100B12C 01234 0 50 100 150 200 forward voltage v f (v) forward current i f (a) fig.8- forward characteristics of free wheeling diode (typical) t c =25 t c =125 0 400 800 1200 1600 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 collector to emitter voltage v ce (v) collector current i c (a) fig.10- reverse bias safe operating area (typical) r g =10 v ge = 15v t c Q 125 0 100 200 300 400 500 600 1 2 5 10 20 50 100 200 500 -di/dt (a/ s) peak reverse recovery current i rrm (a) reverse recovery time trr (ns) fig.9- reverse recovery characteristics (typical) i rrm trr i f =100a t c =25 5 10 20 50 100 200 0.05 0.1 0.2 0.5 1 2 5 10 series gate impedance r g ( ) switching time t ( s) fig.7- series gate impedance vs. switching time (typical) v cc =600v i c =100a v ge = 15v t c =25 tf tr ton toff 10 -5 10 -4 10 -3 10 -2 10 -1 110 1 2x10 -3 5x10 -3 1x10 -2 2x10 -2 5x10 -2 1x10 -1 2x10 -1 5x10 -1 1 time t (s) transient thermal impedance rth (j-c) ( /w) fig.11- transient thermal impedance t c =25 1 shot pulse frd igbt
|
